FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|---|
| FHW1210HC100JGB | 10μH | ±5% | 22@7.9MHz | 20 | 6.8 | |
| FHW1210HC100KGT | 10μH | ±10% | 22@7.9MHz | 20 | 6.8 | |
| FHW1210HC100JGT | 10μH | ±5% | 22@7.9MHz | 20 | 6.8 | |
| FHW1008UC100KGT | 10μH | ±10% | 20@7.9MHz | 40 | 9.1 | |
| FHW1008UC100JGB | 10μH | ±5% | 20@7.9MHz | 40 | 9.1 | |
| FHW1008UC100JGT | 10μH | ±5% | 20@7.9MHz | 40 | 9.1 | |
| FHW1210HC8R2JSB | 8.2μH | ±5% | 20@7.9MHz | 50 | 8.6 | |
| FHW1210HC8R2JGB | 8.2μH | ±5% | 20@7.9MHz | 50 | 8.6 | |
| FHW1210HC8R2KGT | 8.2μH | ±10% | 20@7.9MHz | 50 | 8.6 | |
| FHW1210HC8R2JST | 8.2μH | ±5% | 20@7.9MHz | 50 | 8.6 | |
| FHW1210HC8R2JGT | 8.2μH | ±5% | 20@7.9MHz | 50 | 8.6 | |
| FHW1008UC8R2JGT | 8.2μH | ±5% | 18@7.9MHz | 40 | 8.2 | |
| FHW1008UC8R2JGB | 8.2μH | ±5% | 18@7.9MHz | 40 | 8.2 | |
| FHW1008UC8R2KGT | 8.2μH | ±10% | 18@7.9MHz | 40 | 8.2 | |
| FHW1210HC6R8KGT | 6.8μH | ±10% | 20@7.9MHz | 55 | 8 |